2SA872A データシートの表示（PDF） - Renesas Electronics

部品番号

コンポーネント説明

一致するリスト

2SA872A

Silicon PNP Epitaxial / 2SA872, 2SA872A / TO 92 Package

Renesas Electronics 

2SA872A

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test conditions

Collector to emitter breakdown voltage

V(BR)CEO

–120

—

—

V IC = –1 mA, RBE = ∞

Collector cutoff current

ICBO

—

—

—

µA VCB = –75 V, IE = 0

DC current transfer ratio

—

—

–0.5

µA VCE = –100 V, IE = 0

hFE1*1

250

—

800

VCE = –12 V,

IC = –2 mA

hFE2

160

—

—

VCE = –12 V,

IC = –0.1 mA

Base to emitter voltage

VBE

—

—

–0.75

V VCE = –12 V,

IC = –2 mA

Collector to emitter saturation voltage

VCE(sat)

—

—

–0.5

V IC = –10 mA,

IB = –1 mA

Gain bandwidth product

fT

—

120

—

MHz VCE = –12 V,

IC = –2 mA

Collector output capacitance

Cob

—

1.8

—

pF VCB = –25 V, IE = 0,

f = 1 MHz

Noise figure

NF

—

—

5.0

dB VCE = –6 V, f = 10 Hz

IC = –50 µA

Rg = 50 kΩ

—

—

1.5

dB

f = 1 kHz

Note: 1. The 2SA872A is grouped by hFE1 as follows.

D

E

250 to 500 400 to 800

Rev.2.00 Aug 10, 2005 page 2 of 5

Share Link: