2SA872A データシートの表示（PDF） - Hitachi -> Renesas Electronics

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2SA872A

Silicon PNP Epitaxial / 2SA872, 2SA872A

Hitachi -> Renesas Electronics 

2SA872, 2SA872A

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

2SA872

2SA872A

Unit

–90

–120

V

–90

–120

V

–5

–5

V

–50

–50

mA

300

300

mW

150

150

°C

–55 to +150

–50 to +150

°C

Electrical Characteristics (Ta = 25°C)

2SA872

Item

Symbol Min Typ

Collector to emitter

breakdown voltage

V(BR)CEO –90 —

Collector cutoff current ICBO

——

——

DC current tarnsfer ratio hFE1*1 250 —

2SA872A

Max Min Typ

— –120 —

–0.5 — —

—— —

800 250 —

hFE2

160 — — 160 —

Base to emitter voltage VBE

— — –0.75 — —

Collector to emitter

saturation voltage

VCE(sat)

—

—

–0.5 —

—

Gain bandwidth product fT

— 120 — — 120

Collector output

capacitance

Noise figure

Cob

— 1.8 — — 1.8

NF

— — 5.0 — —

— — 1.5 — —

Note: 1. The 2SA872/A is grouped by hFE1 as follows.

D

E

250 to 500 400 to 800

Max Unit Test conditions

—V

IC = –1 mA, RBE = ∞

— µA

–0.5 µA

800

—

–0.75 V

–0.5 V

— MHz

— pF

VCB = –75 V, IE = 0

VCE = –100 V, IE = 0

VCE = –12 V,

IC = –2 mA

VCE = –12 V,

IC = –0.1 mA

VCE = –12 V,

IC = –2 mA

IC = –10 mA,

IB = –1 mA

VCE = –12 V,

IC = –2 mA

VCB = –25 V, IE = 0,

f = 1 MHz

5.0 dB

1.5 dB

VCE = –6 V, f = 10 Hz

IC = –50 µA

Rg = 50 kΩ

f = 1 kHz

2

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