2SD467 データシートの表示（PDF） - Renesas Electronics

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2SD467

2SD467 / Silicon NPN Epitaxial / TO 92 Package

Renesas Electronics 

2SD467

Electrical Characteristics

Item

Symbol Min

Collector to base breakdown voltage

V(BR)CBO

25

Collector to emitter breakdown voltage V(BR)CEO

20

Emitter to base breakdown voltage

V(BR)EBO

5

Collector cutoff current

DC current transfer ratio

ICBO

—

hFE*1

85

Collector to emitter saturation voltage

VCE(sat)

—

Base to emitter voltage

VBE

—

Gain bandwidth product

fT

—

Collector output capacitance

Cob

—

Note: 1. The 2SD467 is grouped by hFE as follows.

B

C

85 to170

120 to 240

Typ

—

—

—

—

—

0.19

0.76

280

12

Max

—

—

—

1.0

240

0.5

1.0

—

—

Unit

V

V

V

µA

V

V

MHz

pF

(Ta = 25°C)

Test conditions

IC = 10 µA, IE = 0

IC = 1 mA, RBE = ∞

IE = 10 µA, IC = 0

VCB = 20 V, IE = 0

VCE = 1 V, IC = 0.15 A

(Pulse test)

IC = 0.5 A, IB = 0.05 A

(Pulse test)

VCE = 1 V, IC = 0.15 A

(Pulse test)

VCE = 1 V, IC = 0.15 A

(Pulse test)

VCB = 10 V, IE = 0, f = 1 MHz

Rev.2.00 Aug 10, 2005 page 2 of 5

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