2SA844 データシートの表示（PDF） - Renesas Electronics

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2SA844

Silicon PNP Epitaxial / TO-92 Package

Renesas Electronics 

2SA844

Electrical Characteristics

Item

Symbol Min

Collector to base breakdown voltage

V(BR)CBO

–55

Collector to emitter breakdown voltage V(BR)CEO –55

Emitter to base breakdown voltage

V(BR)EBO

–5

Collector cutoff current

ICBO

—

Emitter cutoff current

DC current transfer ratio

IEBO

—

hFE*1

160

Collector to emitter saturation voltage

VCE(sat)

—

Base to emitter voltage

VBE

—

Gain bandwidth product

fT

—

Collector output capacitance

Cob

—

Note: 1. The 2SA844 is grouped by hFE as follows.

C

D

160 to 320 250 to 500

Typ

—

—

—

—

—

—

–0.1

–0.66

200

2.0

Max

—

—

—

–100

–50

500

–0.5

–0.75

—

—

Unit

V

V

V

nA

nA

V

V

MHz

pF

(Ta = 25°C)

Test conditions

IC = –10 µA, IE = 0

IC = –1 mA, RBE = ∞

IE = –10 µA, IC = 0

VCB = –18 V, IE = 0

VEB = –2 V, IC = 0

VCE = –12 V, IC = –2 mA

IC = –10 mA, IB = –1 mA

VCE = –12 V, IC = –2 mA

VCE = –12 V, IE = –2 mA

VCB = –10 V, IE = 0, f = 1 MHz

Rev.2.00 Aug 10, 2005 page 2 of 4

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