HMD1M32M2GL データシートの表示（PDF） - Unspecified
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HMD1M32M2GL Datasheet PDF : 7 Pages
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HANBit
HMD1M32M2GL
Note: 1. Icc depends on output load condition when the device is selected.
Icc (max) is specified at the output open condition.
2. Address can be changed once or less while /RAS = VIL.
3. Address can be changed once or less while /CAS = VIH
CAPACITANCE
o
( TA=25 C, Vcc = 5V+/- 10%, f = 1Mhz )
DESCRIPTION
SYMBOL
MIN
MAX
UNITS
Input Capacitance (A0-A9)
Input Capacitance (/WE,/RAS, /CAS0-
/CAS3,/OE)
CI1
-
C I2
-
5
pF
7
pF
Input/Output Capacitance (DQ0-31)
CDQ1
-
7
pF
Note: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. /CAS = VIH to disable DOUT.
NOTE
1
1,2
1,2
AC
CHARACTERISTICS
(
o
0C
≤
TA
≤
70oC
,
Vcc
=
5V±10%,
VIH
/VIL =
2.4/0.8V,
VOH
/VOL =2.4/0.4V,
See
notes
1,2)
SYMBOL
PARAMETER
-5
MIN
MAX
-6
MIN MAX
UNIT
NOTE
tRC
tRWC
tRAC
Random Read or Write Cycle Time
Read-modify-writer cycle time
Access Time from /RAS
90
110
ns
133
155
ns
50
60
ns 3,4,10
tCAC Access Time from /CAS
15
15
ns
3,4,5
Taa
Access Time from Column Address
25
30
ns
3,10
tOFF Output Buffer Turn-off Time
0
13
0
15
ns
6
tT
TRP
Transition Time (Rise and Fall)
/RAS Precharge Time
3
50
3
50
ns
2
30
40
ns
tRAS
tRSH
tCSH
tCAS
tRCD
tRAD
tCRP
tASR
tRAH
tASC
tCAH
tRAL
/RAS Pulse Width
/RAS Hold Time
/CAS Hold Time
/CAS Pulse Width
/RAS to /CAS Delay Time
/RAS to Column Address Delay Time
/CAS to /RAS Precharge Time
Row Address Setup Time
Row Address Hold Time
Column Address Setup Time
Column Address Hold Time
Column Address to /RAS Lead Time
50
10K
60
10K
ns
13
15
ns
50
60
ns
13
10K
15
10K
ns
20
37
20
45
ns
4
15
25
15
30
ns
10
5
5
ns
0
0
ns
10
10
ns
0
0
ns
11
10
10
ns
11
25
30
ns
tRCS Read Command Setup Time
0
0
ns
tRCH Read Command Hold Time to /CAS
0
0
ns
8
URL:www.hbe.co.kr
REV.1.0 (August.2002)
4
HANBit Electronics Co., Ltd.
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