K75T60 データシートの表示（PDF） - Infineon Technologies

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K75T60

Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

Infineon Technologies 

Thermal Resistance

Parameter

Characteristic

IGBT thermal resistance,

junction – case

Diode thermal resistance,

junction – case

Thermal resistance,

junction – ambient

IKW75N60T

TRENCHSTOP™ Series

q

Symbol

RthJC

RthJCD

RthJA

Conditions

Max. Value

Unit

0.35

K/W

0.6

40

Electrical Characteristic, at Tj = 25 C, unless otherwise specified

Parameter

Symbol

Conditions

Static Characteristic

Collector-emitter breakdown voltage

Collector-emitter saturation voltage

Diode forward voltage

Gate-emitter threshold voltage

Zero gate voltage collector current

Gate-emitter leakage current

Transconductance

Integrated gate resistor

V(BR)CES

VCE(sat)

VF

VGE(th)

ICES

VGE=0V, IC=0.2mA

VGE = 15V, IC=75A

Tj=25C

Tj=175C

VGE=0V, IF=75A

Tj=25C

Tj=175C

IC=1.2mA,VCE=VGE

VCE=600V,

VGE=0V

Tj=25C

Tj=175C

IGES

gfs

RGint

VCE=0V,VGE=20V

VCE=20V, IC=75A

min.

600

-

-

-

-

4.1

-

-

-

-

Value

Typ.

-

1.5

1.9

1.65

1.6

4.9

-

-

-

41

-

Unit

max.

-V

2.0

-

2.0

-

5.7

µA

40

5000

100 nA

-S

Ω

Dynamic Characteristic

Input capacitance

Ciss

VCE=25V,

-

Output capacitance

Coss

VGE=0V,

-

Reverse transfer capacitance

Crss

f=1MHz

-

Gate charge

QGate

VCC=480V, IC=75A

-

VGE=15V

Internal emitter inductance

LE

-

measured 5mm (0.197 in.) from case

Short circuit collector current

IC(SC)

VGE=15V,tSC5s

-

Allowed number of short circuits: <1000; time

VCC = 400V,

between short circuits: >1s.

T j  150C

4620

288

137

470

13

690

- pF

-

-

- nC

- nH

-A

IFAG IPC TD VLS

2

Rev. 2.8 2013-12-05

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