K75T60(2006) データシートの表示（PDF） - Infineon Technologies

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K75T60
(Rev.:2006)

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

TrenchStop Series

IKW75N60T

q

*) Eon and Ets include losses

due to diode recovery

12.0mJ

Ets*

*) Eon and Ets include losses

due to diode recovery

8.0m J

E ts*

8.0mJ

4.0mJ

6.0m J

Eon*

4.0m J

Eoff

2.0m J

E on*

E off

0.0mJ

0A 20A 40A 60A 80A 100A 120A 140A

IC, COLLECTOR CURRENT

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, TJ = 175°C,

VCE = 400V, VGE = 0/15V, RG = 5Ω,

Dynamic test circuit in Figure E)

0.0m J

0Ω

5Ω

10Ω

15Ω

RG, GATE RESISTOR

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, TJ = 175°C,

VCE = 400V, VGE = 0/15V, IC = 75A,

Dynamic test circuit in Figure E)

5.0mJ

*) Eon and Ets include losses

due to diode recovery

4.0mJ

3.0mJ Eoff

2.0mJ

Eon*

1.0mJ

*) Eon and Ets include losses

Ets*

due to diode recovery

8mJ

6mJ

Ets*

4mJ

2mJ

Eon*

E off

0.0mJ

25°C 50°C 75°C 100°C 125°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses

as a function of junction

temperature

(inductive load, VCE = 400V,

VGE = 0/15V, IC = 75A, RG = 5Ω,

Dynamic test circuit in Figure E)

0mJ

300V 350V 400V 450V 500V 550V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 16. Typical switching energy losses

as a function of collector emitter

voltage

(inductive load, TJ = 175°C,

VGE = 0/15V, IC = 75A, RG = 5Ω,

Dynamic test circuit in Figure E)

Power Semiconductors

7

Rev. 2.4 May 06

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