K75T60(2006) データシートの表示（PDF） - Infineon Technologies

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K75T60
(Rev.:2006)

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

TrenchStop Series

IKW75N60T

q

TJ=175°C

60A

50A

40A

TJ=25°C

30A

20A

10A

0A

1000A/µs

1500A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 25. Typical reverse recovery current

as a function of diode current

slope

(VR = 400V, IF = 75A,

Dynamic test circuit in Figure E)

-1200A/µs

-1000A/µs

-800A/µs

TJ=175°C

TJ=25°C

-600A/µs

-400A/µs

-200A/µs

0A/µs

1000A/µs

1500A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 26. Typical diode peak rate of fall of

reverse recovery current as a

function of diode current slope

(VR=400V, IF=75A,

Dynamic test circuit in Figure E)

200A

150A

100A

TJ=25°C

175°C

2.0V

1.5V

1.0V

IF=150A

75A

37.5A

50A

0.5V

0A

0V

1V

2V

VF, FORWARD VOLTAGE

Figure 27. Typical diode forward current as

a function of forward voltage

0.0V

0°C

50°C

100°C

150°C

TJ, JUNCTION TEMPERATURE

Figure 28. Typical diode forward voltage as a

function of junction temperature

Power Semiconductors

10

Rev. 2.4 May 06

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