GP200MHS18 データシートの表示（PDF） - Dynex Semiconductor

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GP200MHS18

Half Bridge IGBT Module

Dynex Semiconductor 

GP200MHS18

ELECTRICAL CHARACTERISTICS

Tcase = 25˚C unless stated otherwise

Symbol

Parameter

td(off)

Turn-off delay time

t

Fall time

f

EOFF

Turn-off energy loss

td(on)

Turn-on delay time

tr

Rise time

E

Turn-on energy loss

ON

Qrr

Diode reverse recovery charge

Tcase = 125˚C unless stated otherwise

Symbol

Parameter

td(off)

Turn-off delay time

tf

Fall time

E

Turn-off energy loss

OFF

td(on)

Turn-on delay time

tr

Rise time

EON

Turn-on energy loss

Q

Diode reverse recovery charge

rr

Test Conditions

IC = 200A

VGE = ±15V

VCE = 900V

R

G(ON)

=

R

G(OFF)

=

4.7Ω

L ~ 100nH

IF = 200A, VR = 50% VCES,

dIF/dt = 2400A/µs

Min. Typ. Max. Units

-

500 650 ns

-

200 300 ns

-

50 120 mJ

-

450 600 ns

-

90 120 ns

-

60

80 mJ

-

50

80 µC

Test Conditions

IC = 200A

VGE = ±15V

VCE = 900V

RG(ON) = RG(OFF) = 4.7Ω

L ~ 100nH

IF = 200A, VR = 50% VCES,

dIF/dt = 2000A/µs

Min. Typ. Max. Units

-

600 800 ns

-

300 400 ns

-

100 150 mJ

-

540 700 ns

-

100 130 ns

-

100 120 mJ

-

80

110 µC

4/10

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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