TLP190B データシートの表示（PDF） - Toshiba
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TLP190B Datasheet PDF : 6 Pages
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TLP190B
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol Rating
Unit
Forward current
Forward current
derating (Ta ≥ 25°C)
Pulse forward current
(100μs pulse 100pps)
LED
Reverse voltage
Diode power dissipation
Diode power dissipation derating
(Ta >25°C)
Junction temperature
Forward current
Reverse voltage
Detector
Output power dissipation
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature (10 s)
Isolation voltage
(AC, 1 minute, R.H. ≤ 60%)
Note 1
IF
ΔIF /°C
50
−0.5
mA
mA / °C
IFP
1
VR
3
PD
100
△PD /°C
-1.0
A
V
mW
mW/°C
Tj
IFD
VRD
PO
Tj
Tstg
Topr
Tsol
BVS
125
50
10
0.5
125
−55 to 125
−40 to 85
260
2500
°C
μA
V
mW
°C
°C
°C
°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4 and 6 shorted together.
Recommended Operating Conditions
Characteristic
Symbol
Min Typ. Max Unit
Forward current
Operating temperature
IF
―
20
25
mA
Topr
−25
―
85
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
2
2017-06-05
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