STTH1002CT データシートの表示（PDF） - STMicroelectronics

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STTH1002CT

HIGH EFFICIENCY ULTRAFAST DIODE

STMicroelectronics 

®

STTH1002C

HIGH EFFICIENCY ULTRAFAST DIODE

MAIN PRODUCT CHARACTERISTICS

IF(AV)

VRRM

Tj (max)

VF (typ)

trr (typ)

Up to 2 x 8A

200 V

175 °C

0.78 V

20 ns

FEATURES AND BENEFITS

■ Suited for SMPS

■ Low losses

■ Low forward and reverse recovery times

■ Insulated package: TO-220FPAB

■ High junction temperature

■ Low leakage current

DESCRIPTION

Dual center tap rectifier suited for Switch Mode

Power Supplies and High frequency DC to DC

converters.

Packaged in DPAK, D2PAK, TO-220AB,

TO220-FPAB and I2PAK, this device is intended

for use in low voltage, high frequency inverters,

free wheeling and polarity protection applications.

A1

K

A2

A2

K

A1

TO-220AB

STTH1002CT

A2

K

I2PAK A1

STTH1002CR

K

A2

K

A1

TO-220FPAB

STTH1002CFP

K

K A2

D2PAAK1

STTH1002CG

K A2

A1

DPAK

STTH1002CB

ABSOLUTE RATINGS (limiting values, per diode)

Symbol

Parameter

Value Unit

VRRM Repetitive peak reverse voltage

IF(RMS) RMS forward current TO-220AB / TO-220FPAB / I2PAK / D2PAK /

200

V

20

A

IF(AV) Average forward

current δ =0.5

DPAK

10

TO-220AB / I2PAK Tc = 155°C Per diode

5

A

/ D2PAK / DPAK

Tc = 150°C Per device

10

Tc = 135°C Per diode

8

Tc = 125°C Per device 16

TO-220FPAB

Tc = 140°C Per diode

5

Tc = 120°C Per device 10

Tc = 110°C Per diode

8

Tc = 75°C Per device 16

IFSM Surge non repetitive forward current

tp = 10 ms Sinusoidal

50

A

Tstg Storage temperature range

- 65 + 175 °C

Tj Maximum operating junction temperature

175

°C

March 2004 - Ed: 4

1/8

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