Product Datasheet
January 21, 2002
TGA1135B-SCC
VG1
VG2
GND
DQ
VD
DET
OUT
RF IN
Reference
diode 2
Q1a
600µm
Q2a
1200µm
Q1b
600µm
Q2b
1200µm
PWR
DET
RF OUT
Reference
diode 1
REF3
GND
VG1
VG2
GND
DQ
VD
REF1
Note: no DC current
Note: If drain bias is from one side
allowed into the “DQ” pad
only, maximum Id is 440mA
REF2
DC Schematic
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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