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K9G4G08B0A データシートの表示(PDF) - Samsung

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K9G4G08B0A
Samsung
Samsung Samsung
K9G4G08B0A Datasheet PDF : 44 Pages
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K9L8G08U1A
K9G4G08U0A K9G4G08B0A
512M x 8 Bit / 1G x 8 Bit NAND Flash Memory
PRODUCT LIST
Part Number
K9G4G08B0A
K9G4G08U0A-P
K9G4G08U0A-I
K9L8G08U1A-I
Vcc Range
2.5V ~ 2.9V
2.7V ~ 3.6V
Organization
X8
Preliminary
FLASH MEMORY
PKG Type
MCP(TBD)
TSOP1
52ULGA
FEATURES
Voltage Supply
- 2.7V Device(K9G4G08B0A) : 2.5V ~ 2.9V
- 3.3V Device(K9G4G08U0A) : 2.7V ~ 3.6V
Organization
- Memory Cell Array : (512M + 16M) x 8bit
- Data Register : (2K + 64) x 8bit
Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (256K + 8K)Byte
Page Read Operation
- Page Size : (2K + 64)Byte
- Random Read : 60µs(Max.)
- Serial Access : 30ns(Min.)
Memory Cell : 2bit / Memory Cell
Fast Write Cycle Time
- Program time : 800µs(Typ.)
- Block Erase Time : 1.5ms(Typ.)
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
- Endurance : 5K Program/Erase Cycles(with 4bit/512byte ECC)
- Data Retention : 10 Years
Command Register Operation
Unique ID for Copyright Protection
Package :
- K9G4G08U0A-PCB0/PIB0 : Pb-FREE PACKAGE
48 - Pin TSOP1(12 x 20 / 0.5 mm pitch)
- K9G4G08U0A-ICB0/IIB0
52 - Pin ULGA (12 x 17 / 1.00 mm pitch)
- K9L8G08U1A-ICB0/IIB0
52 - Pin ULGA (12 x 17 / 1.00 mm pitch)
- K9G4G08B0A : MCP(TBD)
GENERAL DESCRIPTION
Offered in 512Mx8bit, the K9G4G08X0A is a 4G-bit NAND Flash Memory with spare 128M-bit. The device is offered in 2.7V and 3.3V
Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be per-
formed in typical 800µs on the 2,112-byte page and an erase operation can be performed in typical 1.5ms on a (256K+8K)byte block.
Data in the data register can be read out at 30ns cycle time per byte. The I/O pins serve as the ports for address and data input/out-
put as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition,
where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the
K9G4G08X0As extended reliability of 5K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out
algorithm. The K9G4G08X0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and
other portable applications requiring non-volatility.
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