IRF320 データシートの表示（PDF） - Harris Semiconductor

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IRF320

2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs

Harris Semiconductor 

IRF320, IRF321, IRF322, IRF323

Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNITS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Internal Drain Inductance

Internal Source Inductance

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient

CISS VDS = 25V, VGS = 0V, f = 1MHz

-

(Figure 11)

COSS

-

CRSS

-

LD

Measured Between the Modified MOSFET

-

Contact Screw on the Symbol Showing the

Flange that is Closer to Internal Devices

Source and Gate Pins Inductances

and the Center of Die

D

LS

Measured from the

LD

-

Source Lead, 6mm

G

(0.25in) From the

Flange and the Source

LS

Bonding Pad

S

RθJC

-

RθJA Free Air Operation

-

450

-

pF

100

-

pF

20

-

pF

5.0

-

nH

12.5

-

nH

-

2.5 oC/W

-

30 oC/W

Source to Drain Diode Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

Continuous Source to Drain Current

ISD Modified MOSFET

Symbol Showing the

D

Pulse Source to Drain Current

ISDM Integral Reverse P-N

(Note 3)

Junction Diode

G

MIN TYP MAX UNITS

-

-

3.3

A

-

-

13

A

S

Source to Drain Diode Voltage (Note 2)

Reverse Recovery Time

Reverse Recovery Charge

VSD

TC = 25oC, ISD = 3.3A, VGS = 0V, (Figure 13)

-

-

1.8

V

trr

TJ = 25oC, ISD = 3.3A, dISD/dt = 100A/µs

120 270 600 ns

QRR TJ = 25oC, ISD = 3.3A, dISD/dt = 100A/µs

0.64 1.4 3.0 µC

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 50V, starting TJ = 25oC, L = 31mH, RG = 25Ω, peak IAS = 3.3A. See Figures 15, 16.

5-3

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