P4C1024-35P3I データシートの表示（PDF） - Performance Semiconductor
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P4C1024-35P3I Datasheet PDF : 8 Pages
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CAPACITANCES
(VCC = 5.0V, TA = 25°C, f = 1.0 MHz)
Symbol
Parameter
Test Conditions
Max
CIN
C
OUT
Input Capacitance
V = 0V
8
IN
Output Capacitance
VOUT = 0V
10
P4C1024
Unit
pF
pF
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol
ICC
Parameter
Dynamic Operating Current
Temperature
Unit
Range
-15 -17 -20 -25 -35 -45
Commercial 190 180 160 150 145 N/A mA
Industrial N/A N/A 175 165 160 155 mA
*Tested with outputs open and all address and data inputs changing at the maximum write-cycle rate.
The device is continuously enabled for writing, i.e., CE2 ≥ VIH (min), CE1, and WE ≤ VIL (max). Switching inputs are 0V
and 3V.
AC ELECTRICAL CHARACTERISTICS - READ CYCLE
(Over Recommended Operating Temperature & Supply Voltage)
Symbol
Parameter
tRC
Read Cycle Time
-15
-17
-20
-25
-35
-45
Unit
Min Max Min Max Min Max Min Max Min Max Min Max
15
17
20
25
35
45
ns
tAA Address Access Time
15
17
20
25
35
45 ns
t
Chip Enable Access
AC
15
17
20
25
35
45 ns
Time
t
Output Hold from
3
OH
3
3
3
3
3
ns
Address Change
tLZ
Chip Enable to
3
3
3
3
3
3
ns
Output in Low Z
tHZ
Chip Disable to
Output in High Z
8
9
9
11
15
20 ns
tOE
Output Enable Low
to Data Valid
6
7
9
10
15
20 ns
t
Output Enable Low 0
0
0
0
0
0
ns
OLZ
to Low Z
tOHZ Output Enable High
6
7
9
11
15
20 ns
to High Z
tPU
Chip Enable to
0
0
0
0
0
0
ns
Power Up Time
tPD
Chip Disable to
Power Down Time
12
15
20
20
20
25 ns
143
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