HYB 39S16400/800/160AT-8/-10
16 MBit Synchronous DRAM
AC Characteristics 8, 9
TA = 0 to 70 °C; VSS = 0 V; VCC = 3.3 V ± 0.3 V, tT = 1 ns
Parameter
Symbol
Limit Values
-8
-10
min. max. min. max.
Unit
Note
Clock and Clock Enable
Clock Cycle time
tCK
CAS Latency = 3
CAS Latency = 2
CAS Latency = 1
System frequency
tCK
CAS Latency = 3
CAS Latency = 2
CAS Latency = 1
Clock Access time
tAC
CAS Latency = 3
CAS Latency = 2
CAS Latency = 1
Clock High Pulse width
tCH
Clock Low Pulse width
tCL
Transition time (rise and fall)
tT
Setup and Hold Times
Command Setup time
Address Setup time
Data In Setup time
CKE Setup time
CKE Set-up time (Power down mode)
CKE Set-up time (Self Refresh Exit)
Command Hold time
Address Hold time
Data In Hold time
CKE Hold time
tCS
tAS
tDS
tCKS
tCKSP
tCKSR
tCH
tAH
tDH
tCKH
8
–
10 –
ns
12 –
15 –
ns
24 –
30 –
ns
–
125 –
100 MHz
–
83 –
66 MHz
–
41 –
33 MHz
–
7
–
8
ns 10
–
8
–
9
ns
–
21 –
27 ns
3
–
3.5 –
ns
3
–
3.5 –
ns
1
30 1
30 ns
2.5 –
3
–
ns 11
2.5 –
3
–
ns 11
2.5 –
3
–
ns 11
2.5 –
3
–
ns 11
2.5 –
3
–
ns 11
8
–
8
–
ns
1
–
1
–
ns 11
1
–
1
–
ns 11
1
–
1
–
ns 11
1
–
1
–
ns 11
Semiconductor Group
16
1998-10-01