B1477 データシートの表示（PDF） - New Jersey Semiconductor
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B1477 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Beakdown Voltage lc=-10mA; IB= 0
V(BR)CBO Collector-Base Beakdown Voltage
lc= -50 u A; IE=0
V(BR)EBO Emitter-Base Beakdown Voltage
IE=-50 u A; lc=0
VcE(sat) Collector-Emitter Saturation Voltage |c= -3A; |B= -0.3A
VBE(sat) Base-Emitter Saturation Voltage
IGBO
Collector Cutoff Current
lc= -3A; IB= -0.3A
VcB=-100V;lE=0
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
hFE
DC Current Gain
lc=-1A;VCE=-5V
Classifications
D
E
F
60-120 100-200 160-320
2SB1477
MIN TYP. MAX UNIT
100
V
100
V
5
V
-1.5 V
-2.0 V
-10 u A
-10 uA
60
320
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