2MBI150VB-120-50 データシートの表示（PDF） - Fuji Electric
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2MBI150VB-120-50 Datasheet PDF : 6 Pages
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2MBI150VB-120-50
Switching time vs. Collector current (typ.)
VCC=600V, VGE=±15V, RG=4.2Ω, Tj=125°C
10000
1000
toff
ton
tr
100
tf
10
0
100
200
300
400
Collector current: IC [A]
Switching time vs. Gate resistance (typ.)
VCC=600V, IC=150A, VGE=±15V, Tj=125°C
10000
toff
1000
ton
tr
100
tf
10
1
10
100
Gate resistance: RG [Ω]
Switching loss vs. Gate resistance (typ.)
VCC=600V, IC=150A, VGE=±15V, Tj=125, 150°C
60
Tj=125°C
50
Tj=150°C
Eon
40
30
20
10
0
1
Eoff
10
Gate resistance: RG [Ω]
Err
100
3
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Switching time vs. Collector current (typ.)
VCC=600V, VGE=±15V, RG=4.2Ω, Tj=150°C
10000
1000
toff
ton
tr
100
tf
10
0
100
200
300
400
Collector current: IC [A]
Switching loss vs. Collector current (typ.)
VCC=600, VGE=±15V, RG=4.2Ω, Tj=125, 150°C
30
Tj=125°C
Eoff
Tj=150°C
Eon
20
Err
10
0
0
100
200
300
400
Collector current: IC [A]
Reverse bias safe operating area (max.)
+VGE=15V, -VGE=15V, RG=4.2Ω, Tj=150°C
350
300
250
200
150
100
50
0
0
400
800
1200
1600
Collector-Emitter voltage: VCE [V]
(Main terminals)
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