V827432K32SXTG-A1 データシートの表示（PDF） - Mosel Vitelic Corporation

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V827432K32SXTG-A1

2.5 VOLT 32M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE

Mosel Vitelic Corporation  

MOSEL VITELIC

V827432K24S

DDR SDRAM IDD SPEC TABLE

Symbol

A1

PC1600@CL=2

B0

B1

C0

PC2100B@CL=2.5 PC2100A@CL=2 PC2100A@CL=2.5 Unit

IDD0

IDD1

IDD2P

IDD2F

IDD2Q

IDD3P

IDD3N

IDD4R

IDD4W

IDD5

IDD6

Normal

Low power

IDD7

680

850

30

220

140

210

360

1150

1180

1600

30

15

1980

870

1100

30

250

170

290

460

1400

1350

1700

30

15

2580

870

1100

30

250

170

290

460

1400

1350

1700

30

15

2580

1060

mA

1280

mA

30

mA

280

mA

190

mA

370

mA

550

mA

1700

mA

1600

mA

1800

mA

30

mA

15

mA

3180

mA

* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.

Detailed test conditions for DDR SDRAM IDD1 & IDD

IDD1 : Operating current: One bank operation

1. Typical Case : Vdd = 2.5V, T=25’ C

2. Worst Case : Vdd = 2.7V, T= 10’ C

3. Only one bank is accessed with tRC(min), Burst Mode, Address and Control inputs on NOP edge are changing once

per clock cycle. lout = 0mA

4. Timing patterns

- DDR200(100Mhz, CL=2) : tCK = 10ns, CL2, BL=4, tRCD = 2*tCK, tRAS = 5*tCK

Read : A0 N R0 N N P0 N A0 N - repeat the same timing with random address changing

*50% of data changing at every burst

- DDR266B(133Mhz, CL=2.5) : tCK = 7.5ns, CL=2.5, BL=4, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 5*tCK

Read : A0 N N R0 N P0 N N N A0 N - repeat the same timing with random address changing

*50% of data changing at every burst

- DDR266A (133Mhz, CL=2) : tCK = 7.5ns, CL=2, BL=4, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 5*tCK

Read : A0 N N R0 N P0 N N N A0 N - repeat the same timing with random address changing

*50% of data changing at every burst

Legend : A=Activate, R=Read, W=Write, P=Precharge, N=NOP

V827432K24S Rev.1.2 September 2002

9

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