UT6110 データシートの表示（PDF） - New Jersey Semiconductor

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UT6110

RECTIFIERS Standard Recovery, 7.5 Amp to 12 Amp

New Jersey Semiconductor 

UT5105-UT5160

UT6105-UT6160

UT8105-UT8160

UT5105HR2-UT5160HR2 UT6105HR2-UT6160HR2 UT8105HR2-UT8160HR2

ELECTRICAL SPECIFICATIONS (at 25°C unless noted)

Type

Peak Inverse

Voltage

UT8105/8105HR2

UT8110/8HOHR2

UT8:20/8120HR2

UT8140/8140HR2

UT8160/8160HR2

UT6105/6105HR2

UT6110/6110HR2

UT6120/6120HR2

UT614Q/614QHR2

UT6160/6160HR2

UT5105/5105HR2

UT51 10/51 10HR2

UTS120/5120HR2

UT5140/5140HR2

UT5160/5160HR2

50V

100V

200V

4QOV

600V

50V

100V

200V

400V

600V

50V

1.00V

200V

400V

600V

Typical Forward Voltage vs Forward Current.

Maximum Forward

Voltage

1V@8A

Max. Reverse

Current at PIV

25'C

100"C

lOfA

300/iA

1V@6A

10/iA

300VA

IV® 5A

100A

300M

Typical Forward Voltage vs Forward Current

Typical Forward Voltage vs Forward Current

10,000

V, Volts

Typical P.l.V, vs Reverse Current

OPTIONAL HIGH RELIABILITY (HR2) SCREENING

100

SO

% of P.l.V.

The following tests are perfonned on 100% ol the device* specified UTS105HR2 through UT8160HR2.

SCREEN

MIL-STD-750

METHOD

CONDITIONS

1. High Temperature

1032

24 Hours @ 175°C

2. Temperature Cycling

1051

C, 20 Cycles, -65 to +175°C No dwell required

<a 25"C, t *• 1O min. @ extremes.

3. Hermetic Seal

a. Gross Leak

1071

E.ZYGUO

4. High Temperature Reverse Bias (HTRB)

1038

A, TA - 150°C, VR - 80% of rating, 48 hours

5. Interim Electrical Parameters

GO/NO GO

VF and IH @ 25«C

6. ftwier Burn-in

1038

B, TA = 25«C, 96 Hours, I0 adjusted 150°C,

< Tj < 175°C

7. Final Electrical Parameters

GO/NO GO

VF + IR <& 25'C

PDA . 10% (Final Etectricals)

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