TEMD5010X01 データシートの表示（PDF） - Vishay Semiconductors

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TEMD5010X01

Silicon PIN Photodiode

Vishay Semiconductors 

TEMD5010X01

Vishay Semiconductors

Silicon PIN Photodiode

BASIC CHARACTERISTICS

PARAMETER

TEST CONDITION

Forward voltage

Breakdown voltage

Reverse dark current

Diode capacitance

Open circuit voltage

Temperature coefficient of Vo

Short circuit current

Temperature coefficient of Ik

Reverse light current

Angle of half sensitivity

Wavelength of peak sensitivity

IF = 50 mA

IR = 100 µA, E = 0

VR = 10 V, E = 0

VR = 0 V, f = 1 MHz, E = 0

VR = 3 V, f = 1 MHz, E = 0

Ee = 1 mW/cm2, λ = 950 nm

Ee = 1 mW/cm2, λ = 950 nm

Ee = 1 mW/cm2, λ = 950 nm

Ee = 1 mW/cm2, λ = 950 nm

Ee = 1 mW/cm2, λ = 950 nm,

VR = 5 V

Range of spectral bandwidth

Noise equivalent power

Rise time

Fall time

VR = 10 V, λ = 950 nm

VR = 10 V, RL = 1 kΩ,

λ = 820 nm

VR = 10 V, RL = 1 kΩ,

λ = 820 nm

Note

Tamb = 25 °C, unless otherwise specified

BASIC CHARACTERISTICS

Tamb = 25 °C, unless otherwise specified

SYMBOL

VF

V(BR)

Iro

CD

CD

Vo

TKVo

Ik

TKIk

Ira

ϕ

λp

λ0.1

NEP

tr

tf

MIN.

60

45

TYP.

1

2

70

25

350

- 2.6

50

0.1

55

± 65

940

430 to 1100

4 x 10-14

100

100

MAX.

1.3

30

40

UNIT

V

V

nA

pF

pF

mV

mV/K

µA

%/K

µA

deg

nm

nm

W/√Hz

ns

ns

1000

100

10

VR = 10 V

1

20

40

60

80

100

94 8403

Tamb - Ambient Temperature (°C)

Fig. 1 - Reverse Dark Current vs. Ambient Temperature

1.4

1.2

VR = 5 V

λ = 950 nm

1.0

0.8

0.6

0

20

40

60

80 100

94 8409

Tamb - Ambient Temperature (°C)

Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature

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For technical questions, contact: detectortechsupport@vishay.com

Document Number: 84679

Rev. 1.4, 12-May-09

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