T15V256A-85RI データシートの表示（PDF） - Taiwan Memory Technology
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T15V256A-85RI Datasheet PDF : 11 Pages
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CH
T15V256A
DC CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS
PARAMETER
Supply Voltage to Vss Potential
Inputs to Vss Potential
Power Dissipation
Storage Temperature
RATING
-0.5 to + 4.6
-0.5 to Vcc +0.5
0.7
-60 to +150
UNIT
V
V
W
°C
RECOMMENDED OPERATING CONDITIONS
PARAMETER
Supply Voltage
Input Voltage, low
Input Voltage, high
Ambient Temperature
SYM
MIN
TYP
Vcc
2.7
-
VIL
-0.3
-
VIH
2.4
-
TA
0/-40
-
MAX
3.6
0.6
Vcc+0.3
+75/+85
UNIT
V
V
V
°C
TRUTH TABLE
CS
OE
WE
H
X
X
L
H
H
L
L
H
L
X
L
MODE
Not Selected
Output Disable
Read
Write
I/O1- I/O8
High-Z
High-Z
Data Out
Data In
Power
Standby
Active
Active
Active
OPERATING CHARACTERISTICS
(Vcc = 2.7V to 3.6V, Vss = 0V, Ta = 0 ~ +70 °C /-40 to 85°C)
PARAMETER
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Operating Power
Supply Current
Standby Power
Supply Current
SYM .
ILI
ILO
VOL
VOH
Icc
ISB
ISB1
TEST CONDITIONS
Vin=Vss to Vcc
MIN. TYP. MAX. UNIT
-
-
1 µA
VI/O=Vss to Vcc , CS =VIH or -
-
1 µA
OE = VIH or WE = VIL
IOL= + 2.1mA
-
- 0.4 V
IOH = - 1.0mA
2.2 -
-
V
CS =VIL, I/O=0mA
Cycle = MIN.
-50
-
-70
-
-
35 mA
-
30 mA
Duty = 100%
-85
-
-
25 mA
-100 -
-
20 mA
CS=VIH, Cycle=min, Duty=100%
-
CS ≥ Vcc-0.2V
-
- 0.3 mA
-
5 uA
Taiwan Memory Technology, Inc. reserves the right P. 3
to change products or specifications without notice.
Publication Date: SEP. 2001
Revision:A
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