STP9NK80Z データシートの表示（PDF） - STMicroelectronics
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STP9NK80Z
STMicroelectronics
STP9NK80Z Datasheet PDF : 11 Pages
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STP9NK80Z - STF9NK80Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 7: On/Off
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source
ID = 1 mA, VGS = 0
800
V
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
µA
50
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±10
µA
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 100µA
3
3.75
4.5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 3.75 A
0.9
1.2
Ω
Table 8: DYNAMIC
Symbol
Parameter
gfs (1) Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Coss eq. (3) Equivalent Output
Capacitance
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
tr(Voff)
tf
tc
Qg
Qgs
Qgd
Off-voltage Rise Time
Fall Time
Cross-over Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDS = 15 V, ID = 3.75 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
VGS = 0V, VDS = 0V to 640V
VDD = 400 V, ID = 3.75 A
RG = 4.7Ω VGS = 10 V
(see Figure 19)
VDD = 640 V, ID = 7.5A,
RG = 4.7Ω, VGS = 10V
(see Figure 20)
VDD = 640V, ID = 7.5 A,
VGS = 10V
(see Figure 22)
Typ.
7.5
1900
180
38
75
26
19
58
18
12
10
24
60
12
35
Max.
84
Unit
S
pF
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
Table 9: Source Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
7.5
A
30
A
VSD (1) Forward On Voltage
ISD = 7.5 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 7.5 A, di/dt = 100A/µs
VDD = 35V, Tj = 25°C
(see Figure 20)
530
ns
4.5
µC
17
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 7.5 A, di/dt = 100A/µs
VDD = 35V, Tj = 150°C
(see Figure 20)
690
ns
6.4
µC
17
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
3/11
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