STB200NF03T4 データシートの表示（PDF） - STMicroelectronics

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STB200NF03T4

N-channel 30V - 0.0032Ω - 120A - D2PAK/I2PAK/TO-220 STripFET™ III Power MOSFET

STMicroelectronics 

STP200NF03 - STB200NF03 - STB200NF03-1

Electrical characteristics

The previous curve gives the safe operating area for unclamped inductive loads, single

pulse or repetitive, under the following conditions:

PD(AVE) = 0.5 * (1.3 * BVDSS * IAV)

EAS(AR) = PD(AVE) * tAV

Where:

IAV is the Allowable Current in Avalanche

PD(AVE) is the Average Power Dissipation in Avalanche (Single Pulse)

tAV is the Time in Avalanche

To de rate above 25 oC, at fixed IAV, the following equation must be applied:

IAV = 2 * (Tjmax - TCASE)/ (1.3 * BVDSS * Zth)

Where:

Zth = K * Rth is the value coming from Normalized Thermal Response at fixed pulse width

equal to TAV.

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