SPD30N03L データシートの表示（PDF） - Siemens AG
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SPD30N03L Datasheet PDF : 9 Pages
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SPD30N03L
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Dynamic Characteristics
Gate to source charge
VDD = 24 V, ID = 30 A
Gate to drain charge
VDD = 24 V, ID = 30 A
Gate charge total
VDD = 24 V, ID = 30 A, VGS = 0 to 10 V
Gate plateau voltage
VDD = 24 V, ID = 30 A
Qgs
-
Qgd
-
Qg
-
V(plateau)
-
4
6 nC
21 31.5
54 80
3.31 - V
Reverse Diode
Inverse diode continuous forward current
IS
TC = 25 °C
-
-
30 A
Inverse diode direct current,pulsed
TC = 25 °C
ISM
-
-
120
Inverse diode forward voltage
VGS = 0 V, IF = 60 A
Reverse recovery time
VR = 15 V, IF=IS , diF/dt = 100 A/µs
VSD
- 0.97 1.7 V
trr
-
45 68 ns
Reverse recovery charge
VR = 15 V, IF=lS , diF/dt = 100 A/µs
Qrr
- 0.045 0.068 µC
Semiconductor Group
4
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