PBMB75A6
Fig.7- Series Gate Impedance vs. Switching Time (Typical)
5
VCC= 3 0 0 V
IC=75A
VG=±15V
2 TC=25℃
toff
ton
1
tr
0.5
tf
0.2
0.1
0.05 1
10
100
Series Gate Impedance RG (Ω)
Fig.8- Forward Characteristics of Free Wheeling Diode
(Typical)
150
TC= 2 5 ℃
TC=125℃
125
100
75
50
25
0
0
1
2
3
4
Forward Voltage VF (V)
Fig.9- Reverse Recovery Characteristics (Typical)
500
IF= 7 5 A
TC= 2 5 ℃
200
trr
100
50
20
10
IRrM
5
0
100
200
300
400
500
600
-di/dt (A/μs)
500
200
100
50
20
10
5
2
1
0.5
0.2
0.1
0
Fig.10- Reverse Bias Safe Operating Area (Typical)
RG=10Ω
VGE=±15V
TC≦125℃
200
400
600
800
Collector to Emitter Voltage V CE (V)
1
5x10 -1
2x10 -1
1x10 -1
5x10 -2
2x10 -2
1x10 -2
5x10 -3
2x10 -3
1x10
-3
10
-5
Fig.11- Transient Thermal Impedance
FRD
IGBT
TC= 2 5 ℃
1 Shot Pulse
10 -4
10 -3
10 -2
10 -1
1
10 1
Time t (s)