P4C1024 データシートの表示（PDF） - Semiconductor Corporation

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P4C1024

HIGH SPEED 128K x 8 DUAL CHIP ENABLE CMOS STATIC RAM

Semiconductor Corporation 

P4C1024

POWER DISSIPATION CHARACTERISTICS VS. SPEED

Symbol

Parameter

Temperature

Range

Commercial

-15 -20 -25 -35 -45 -55 -70 -85 -100 -120

190 160 150 145 N/A N/A N/A N/A N/A N/A

Unit

mA

ICC Dynamic Operating Current* Industrial

N/A 175 165 160 155 N/A N/A N/A N/A N/A mA

Military

N/A 150 140 135 130 125 115 110 105 100 mA

*VCC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE1 = VIL, CE2 = VIH, OE = VIH

DATA RETENTION CHARACTERISTICS (P4C1024L, Military Temperature Only)

Symbol

Parameter

VDR

ICCDR

VCC for Data Retention

Data Retention Current

t

Chip Deselect to

CDR

Data Retention Time

t†

Operation Recovery Time

R

*T = +25°C

A

§t = Read Cycle Time

RC

†This parameter is guaranteed but not tested.

Test Condition

Min

2.0

CE

1

≥

VCC

–

0.2V

or

CE2 ≤ 0.2V, VIN ≥ VCC – 0.2V

or

V

IN

≤

0.2V

t§

RC

Typ.*

VCC=

2.0V 3.0V

50

200

Max

VCC=

2.0V 3.0V

400 600

Unit

V

µA

ns

ns

DATA RETENTION WAVEFORM

Document # SRAM124 REV A

Page 3 of 14

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