T2316405A データシートの表示（PDF） - Taiwan Memory Technology

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T2316405A

4M x 4 DYNAMIC RAM EDO PAGE MODE

Taiwan Memory Technology 

tm TE

CH

ABSOLUTE MAXIMUM RATINGS

Parameter

Voltage on Any Pin Relative To Vss

Supply Voltage Relative To Vss

Short circuit Output Current

Power Dissipation

Operating Temperature

Storage Temperature

Symbol

VT

Vcc

Iout

PT

TOPR

Tstg

T2316405A

Preliminary T2316407A

Value

Unit

-0.5 to 4.6

V

-0.5 to 4.6

V

50

mA

1

W

0 to 70

°C

-55 to 125

°C

RECOMMENDED DC OPERATING CONDITIONS

(Ta = 0 to +70°C) For T2316405A-10 only

Parameter

Symbol

Min.

Typ

Max.

Vss

0

0

0

Supply Voltage

Vcc

2.4

2.6

2.8

Input High Voltage

Input Low Voltage

VIH

2.0

VIL

-0.3

-

Vcc+0.3V

-

0.8

Unit Notes

V

V

1

V

1

V

1

(Ta = 0 to +70°C) For T2316407A-50/60/70 only

Parameter

Supply Voltage

Symbol

Min.

Typ

Vss

0

0

Vcc

3.0

3.3

Input High Voltage

VIH

2.0

-

Input Low Voltage

VIL

-0.3

-

Notes : 1. All voltages referenced to Vss

Max.

0

3.6

Vcc+0.3V

0.8

Unit Notes

V

V

1

V

1

V

1

Taiwan Memory Technology, Inc. reserves the right P. 3

to change products or specifications without notice.

Publication Date: APR 2001

Revision:0.B

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