MPXV2010G データシートの表示（PDF） - Freescale Semiconductor
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MPXV2010G
Freescale Semiconductor
MPXV2010G Datasheet PDF : 14 Pages
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ON-CHIP TEMPERATURE COMPENSATION AND CALIBRATION
30
VS = 10 Vdc
TA = 25°C
25 P1 > P2
20
15
aMAX
10
5
0
–5
kPa
PSI
2.5
0.362
TYP
MIN
5
7.5
0.725
1.09
Span
Range
(Typical)
Offset
10
(Typical)
1.45
Figure 2. Output vs. Pressure Differential
Figure 2 shows the output characteristics of the MPX2010/
MPXV2010G series at 25°C. The output is directly
proportional to the differential pressure and is essentially a
straight line.
The effects of temperature on full scale span and offset are
very small and are shown under Operating Characteristics.
This performance over temperature is achieved by having
both the shear stress strain gauge and the thin-film resistor
circuitry on the same silicon diaphragm. Each chip is
dynamically laser trimmed for precise span and offset
calibration and temperature compensation.
Wire Bond
Silicone
Die Coat
Die
P1
Stainless Steel
Metal Cover
Epoxy
Case
Lead Frame
RTV Die
Bond
P2
Figure 3. Unibody Package: Cross Sectional Diagram (Not to Scale)
Figure 3 illustrates the differential/gauge die in the basic
chip carrier (Case 344). A silicone gel isolates the die surface
and wire bonds from the environment, while allowing the
pressure signal to be transmitted to the silicon diaphragm.
The MPX2010/MPXV2010G series pressure sensor
operating characteristics and internal reliability and
qualification tests are based on use of dry air as the pressure
media. Media other than dry air may have adverse effects on
sensor performance and long term reliability. Contact the
factory for information regarding media compatibility in your
application.
MPX2010
4
Sensors
Freescale Semiconductor
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