MG150J1BS11 データシートの表示（PDF） - Toshiba
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MG150J1BS11 Datasheet PDF : 5 Pages
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TOSHIBA IGBT Module Silicon N Channel IGBT
MG150J1BS11
MG150J1BS11
High Power Switching Applications
Motor Control Applications
Unit: mm
Enhancement-mode
The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-emitter voltage
Gate-emitter voltage
DC
Collector current
1ms
Collector power dissipation
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal / mounting)
Symbol
VCES
VGES
IC
ICP
PC
Tj
Tstg
VIsol
―
JEDEC
JEITA
TOSHIBA
Rating
Unit
600
V
±20
V
150
A
300
450
W
150
°C
−40 to 125
°C
2500
(AC 1 min.)
V
2/3
N·m
―
―
2-33F2A
1
2003-04-11
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