MC74HC367A(2013) データシートの表示（PDF） - ON Semiconductor

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MC74HC367A
(Rev.:2013)

Hex 3-State Noninverting Buffer with Separate 2-Bit and 4-Bit Sections

ON Semiconductor 

MC74HC367A

DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

Symbol

Parameter

VCC

Test Conditions

V

VIH

Minimum High−Level Input

Vout = VCC − 0.1 V

2.0

Voltage

|Iout| v 20 mA

3.0

4.5

6.0

VIL

Maximum Low−Level Input

Vout = 0.1 V

2.0

Voltage

|Iout| v 20 mA

3.0

4.5

6.0

VOH

Minimum High−Level Output

Vin = VIH

2.0

Voltage

|Iout| v 20 mA

4.5

6.0

VOL

Maximum Low−Level Output

Voltage

Vin = VIH

|Iout| v 3.6 mA 3.0

|Iout| v 6.0 mA 4.5

|Iout| v 7.8 mA 6.0

Vin = VIL

2.0

|Iout| v 20 mA

4.5

6.0

Vin = VIL

|Iout| v 3.6 mA 3.0

|Iout| v 6.0 mA 4.5

|Iout| v 7.8 mA 6.0

Iin

Maximum Input Leakage Current Vin = VCC or GND

6.0

IOZ

Maximum Three−State

Leakage Current

Output in High−Impedance State

6.0

Vin = VIL or VIH

Vout = VCC or GND

ICC

Maximum Quiescent Supply

Vin = VCC or GND

6.0

Current (per Package)

Iout = 0 mA

Guaranteed Limit

− 55 to

25°C

v 85°C v 125°C Unit

1.5

1.5

1.5

V

2.1

2.1

2.1

3.15

3.15

3.15

4.2

4.2

4.2

0.50

0.50

0.50

V

0.90

0.90

0.90

1.35

1.35

1.35

1.80

1.80

1.80

1.9

1.9

1.9

V

4.4

4.4

4.4

5.9

5.9

5.9

2.48

2.34

2.20

3.98

3.84

3.70

5.48

5.34

5.20

0.1

0.1

0.1

V

0.1

0.1

0.1

0.1

0.1

0.1

0.26

0.33

0.40

0.26

0.33

0.40

0.26

0.33

0.40

± 0.1

± 1.0

± 1.0

mA

± 0.5

± 5.0

± 10

mA

4

40

160

mA

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