IRFD310 データシートの表示（PDF） - Intersil

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IRFD310

0.4A, 400V, 3.600 Ohm, N-Channel Power MOSFET

Intersil 

IRFD310

Source to Drain Diode Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

Continuous Source to Drain Current

Pulse Source to Drain Current (Note 3)

ISD

ISDM

Modified MOSFET

Symbol Showing the

Integral Reverse P-N

D

Junction Rectifier

G

MIN

TYP MAX UNITS

-

-

0.4

A

-

-

1.6

A

S

Source to Drain Diode Voltage (Note 2)

VSD

TJ = 25oC, ISD = 1.6A, VGS = 0V (Figure 12)

-

-

1.6

V

Reverse Recovery Time

trr

TJ = 150oC, ISD = 1.6A, dISD/dt = 100A/µs

-

380

-

ns

Reverse Recovery Charge

QRR

TJ = 150oC, ISD = 1.6A, dISD/dt = 100A/µs

-

2.7

-

µC

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by Max junction temperature.

4. VDD = 40V, starting TJ = 25oC, L = 44.89mH, RG = 50Ω, peak IAS = 1.4A.

Typical Performance Curves Unless Otherwise Specified

1.2

0.4

1.0

0.8

0.3

0.6

0.4

0.2

0

0

25

50

75

100

125

150

TA, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

0.1

0

25

50

75

100

125

150

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

5

1

0.1

00.1

OPERATION IN THIS

AREA MAY BE

LIMITED BY rDS(ON)

TC = 25oC

TJ = MAX RATED

SINGLE PULSE

0.001

1

10

100

VDS, DRAIN TO SOURCE VOLTAGE (V)

10µs

100µs

1ms

10ms

DC

1000

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA

2.20

1.76

1.32

VGS = 7V

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

VGS = 6V

0.88

0.44

00

VGS = 5V

VGS = 4V

20

40

60

80

100

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 4. OUTPUT CHARACTERISTICS

4-295

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