JANKCA1N5552US データシートの表示（PDF） - Unspecified

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JANKCA1N5552US

SEMICONDUCTOR DEVICE, DIODE,SILICON, POWER, RECTIFIER

Unspecified 

MIL-PRF-19500/420H

TABLE I. Group A inspection - Continued.

Inspection 1/

MIL-STD-750

Method

Conditions

Subgroup 3

High temperature

operation:

TA = +100°C

Reverse current

leakage

Reverse current

leakage

1N5550, 1N5550US

1N5551, 1N5551US

1N5552, 1N5552US

1N5553, 1N5553US

1N5554, 1N5554US

Forward voltage

1N5550, 1N5550US

1N5551, 1N5551US

1N5552, 1N5552US

1N5553, 1N5553US

1N5554, 1N5554US

Low temperature

operation:

DC method

4016 DC method

4011

VR = 200 V dc

VR = 400 V dc

VR = 600 V dc

VR = 800 V dc

VR = 1,000 V dc

IF = 9.0 A(pk); duty cycle ≤ 2

percent (pulsed see 4.5.1); tp ≤

8.3 ms

TA = -55°C

Forward voltage

Forward voltage

4011

4011

IF = 9.0 A(pk); duty cycle ≤ 2

percent (pulsed); tp ≤ 8.3 ms

IF = 1.5 A dc

Breakdown voltage

(diodes)

1N5550, 1N5550US

1N5551, 1N5551US

1N5552, 1N5552US

1N5553, 1N5553US

1N5554, 1N5554US

Subgroup 4

4021

IR = 50 µA dc

IR = 50 µA dc

IR = 50 µA dc

IR = 50 µA dc

IR = 50 µA dc

Reverse recovery time

4031 Condition B1

Scope display evaluation

4023 See 4.5.3, n = 116, c = 0

See footnote at end of table.

Symbol

Limits

Min

Max

IR2

75

75

75

75

75

VF2

1.2

1.2

1.2

1.3

1.3

VF3

1.5

VF4

0.5

1.2

VBR2

200

400

600

800

1,000

trr

2.0

Unit

µA dc

µA dc

µA dc

µA dc

µA dc

V(pk)

V(pk)

V(pk)

V(pk)

V(pk)

V(pk)

V dc

V dc

V dc

V dc

V dc

V dc

µs

17

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