JANKCA1N5553 データシートの表示（PDF） - Unspecified

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JANKCA1N5553

SEMICONDUCTOR DEVICE, DIODE,SILICON, POWER, RECTIFIER

Unspecified 

MIL-PRF-19500/420H

* TABLE I. Group A inspection.

Inspection 1/

MIL-STD-750

Method

Conditions

Subgroup 1

Visual and mechanical

inspection

2071

Subgroup 2

Thermal impedance

Forward voltage

1N5550, 1N5550US

1N5551, 1N5551US

1N5552, 1N5552US

1N5553, 1N5553US

1N5554, 1N5554US

Forward voltage

Reverse current

leakage

1N5550, 1N5550US

1N5551, 1N5551US

1N5552, 1N5552US

1N5553, 1N5553US

1N5554, 1N5554US

Breakdown voltage

(diodes)

1N5550, 1N5550US

1N5551, 1N5551US

1N5552, 1N5552US

1N5553, 1N5553US

1N5554, 1N5554US

See footnote at end of table.

3101

4011

See 4.3.1 and 4.4.1.

IF = 9.0 A(pk); duty cycle ≤ 2

percent (pulsed see 4.5.1);

tp ≤ 8.3 ms

4011

4016

IF = 1.5 A dc

DC method

4021

VR = 200 V dc

VR = 400 V dc

VR = 600 V dc

VR = 800 V dc

VR = 1,000 V dc

IR = 50 µA dc

IR = 50 µA dc

IR = 50 µA dc

IR = 50 µA dc

IR = 50 µA dc

Symbol

Limits

Unit

Min

Max

ZθJX

VF1

0.6

0.6

0.6

0.6

0.6

VF1

0.5

IR1

VBR1

1.5

°C/W

1.2

V(pk)

1.2

V(pk)

1.2

V(pk)

1.3

V(pk)

1.3

V(pk)

1.0

V dc

1.0

µA dc

1.0

µA dc

1.0

µA dc

1.0

µA dc

1.0

µA dc

200

400

600

800

1,000

V dc

V dc

V dc

V dc

V dc

16

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