2N918CSM データシートの表示（PDF） - Semelab - > TT Electronics plc

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2N918CSM

GENERAL PURPOSE, SMALL SIGNAL NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS

Semelab - > TT Electronics plc  

SEME

LAB

2N918CSM

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)

Parameter

Test Conditions

Min.

VCEO(sus) Collector – Emitter Sustaining Voltage IC = 3mA

IB = 0

15

V(BR)CBO Collector – Base Breakdown Voltage IC = 1µA

IE = 0

30

V(BR)EBO Emitter – Base Breakdown Voltage

IE = 10µA

IC = 0

3

ICBO

Collector – Base Cut-off Current

VCB = 25V IE = 0

VCE(sat) Collector – Emitter Saturation Voltage IC = 10mA IB = 1mA

VBE(sat) Base – Emitter Saturation Voltage

IC = 10mA IB = 1mA

IC = 500µA VCE = 10V

10

hFE

DC Current Gain

IC = 3mA

VCE = 1V

20

IC = 10mA VCE = 10V

20

fT

Current Gain Bandwidth Product

IC = 4mA

VCE = 10V

600

f = 100MHz

Cob

Output Capacitance

Cib

Input Capacitance

IE = 0

f = 140kHz

VEB = 0.5V

f = 140kHz

VCB = 10V

VCB = 0

IC = 0

NF

Noise Figure

Gpe

Amplifier Power Gain

IC = 1mA

VCE = 6V

RG = 400Ω f = 60MHz

IC = 6mA

VCB = 12V

15

f = 200MHz

PO

Power Output

η

Collector Efficiency

IC = 8mA

VCB = 15V

30

f = 500MHz

25

Typ.

Max. Unit

V

0.010 µA

0.4

V

1.0

200 —

MHz

1.7

pF

3.0

2.0

pF

6.0

dB

mW

%

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Prelim. 7/95

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