GL965 データシートの表示（PDF） - GTM CORPORATION
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GL965 Datasheet PDF : 2 Pages
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GL965
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GL965 is designed for use as AF output amplifier and flash unit.
Package Dimensions
SOT-223
ISSUED DATE :2004/04/25
REVISED DATE :2004/12/08B
Absolute Maximum Ratings
Parameter
Junction Temperature
Storage Temperature
Symbol
Tj
Tstg
Absolute Maximum Ratings at Ta = 25
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (Continuous)
Collector Current (Peak PT=10mS)
Total Power Dissipation at Ta = 25
BVCBO
BVCEO
BVEBO
IC
IC
PD
Characteristics at Ta = 25
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE1
*hFE2
fT
Cob
Min.
40
20
7
-
-
-
230
150
-
-
Typ.
-
-
-
-
-
0.35
-
-
150
-
Max.
-
-
-
0.1
0.1
1
800
-
-
50
Classification Of hFE1
Rank
Range
Q
230-380
R
340-600
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0
10
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13 TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Ratings
Unit
+150
-55 ~ +150
40
V
20
V
7.0
V
5
A
8
A
2
W
Unit
V
V
V
uA
uA
V
MHz
pF
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=60V
VEB=7V
IC=3A, IB=0.1A
VCE=2V, IC=0.5A
VCE=2V, IC=2A
VCE=6V, IE=50mA
VCB=20V, f=1MHz
* Pulse Test: Pulse Width 380us, Duty Cycle 2%
S
560-800
GL965
Page: 1/2
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