GL949 データシートの表示（PDF） - GTM CORPORATION

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GL949

PNP SILICON PLANAR HIGH CURRENT TRANSISTOR

GTM CORPORATION 

CORPORATION ISSUED DATE :2006/11/20

REVISED DATE :

Ton

-

120

-

ns

Toff

-

130

-

*Measured under pulse condition. Pulse width=300 s, Duty Cycle 2%

Characteristics Curve

VCC=-10V, IC=-4A, IB1=-IB2=-400mA

Important Notice:

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.

GTM reserves the right to make changes to its products without notice.

GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.

GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

Head Office And Factory:

Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.

TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785

China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China

TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165

GL949

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