DIM100PHM33-F000
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise.
Symbol
Parameter
ICES Collector cut-off current
IGES
VGE(TH)
Gate leakage current
Gate threshold voltage
VCE(sat) †
Collector-emitter
saturation voltage
IF
Diode forward current
IFM
Diode maximum forward
current
VF † Diode forward voltage
Cies Input capacitance
Qg Gate charge
Cres Reverse transfer capacitance
LM Module inductance
RINT Internal transistor resistance
SCData Short circuit current, ISC
Note:
† Measured at the the auxiliary terminals
* L is the circuit inductance + LM
Test Conditions
Min
VGE = 0V, VCE = VCES
VGE = 0V, VCE = VCES, Tcase = 125°C
VGE = ± 20V, VCE = 0V
IC = 10mA, VGE = VCE
5.5
VGE = 15V, IC = 100A
VGE = 15V, IC = 100A, Tj = 125°C
DC
tp = 1ms
IF = 100A
IF = 100A, Tj = 125°C
VCE = 25V, VGE = 0V, f = 1MHz
±15V
VCE = 25V, VGE = 0V, f = 1MHz
Tj = 125°C, VCC = 2500V
tp ≤ 10μs, VGE ≤ 15V
VCE (max) = VCES – L* x dI/dt
IEC 60747-9
Typ
400
6.5
2.8
3.6
100
200
2.9
3.0
18
2.5
0.28
40
540
470
Max Units
1
mA
8
mA
nA
7.0
V
V
V
A
A
V
V
nF
μC
nF
nH
μ
A
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
3/8
www.dynexsemi.com