![](/html/Siemens/150056/page8.png)
BSM50GD60DN2E3226
Forward characteristics of fast recovery
reverse diode IF = f(VF)
parameter: Tj
100
A
IF
80
70
60
50
40
Tj=125°C
Tj=25°C
30
20
10
0
0.0 0.5 1.0 1.5 2.0
V
3.0
VF
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
Diode
10 1
K/W
ZthJC 10 0
10 -1
10 -2
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -3
10 -5
10 -4
10 -3
10 -2
10 -1
tp
s 10 0
Semiconductor Group
8
Jan-10-1997