BS62LV4000TC-70 データシートの表示（PDF） - Brilliance Semiconductor

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BS62LV4000TC-70

Very Low Power/Voltage CMOS SRAM 512K X 8 bit

Brilliance Semiconductor 

BSI

BS62LV4000

„ DC ELECTRICAL CHARACTERISTICS ( TA = 0oC to + 70oC )

PARAMETER

NAME

VIL

PARAMETER

Guaranteed Input Low

Voltage(2)

TEST CONDITIONS

Vcc=3.0V

VIH

Guaranteed Input High

Voltage(2)

Vcc=3.0V

IIL

Input Leakage Current Vcc = Max, VIN = 0V to Vcc

ILO

Output Leakage Current

Vcc = Max, CE = VIH, or OE = VIH,

VI/O = 0V to Vcc

VOL

Output Low Voltage

Vcc = Max, IOL = 2mA

Vcc=3.0V

MIN. TYP. (1) MAX.

UNITS

-0.5

--

0.8

V

2.0

--

Vcc+0.2

V

--

--

1

uA

--

--

1

uA

--

--

0.4

V

VOH

Output High Voltage

Vcc = Min, IOH = -1mA

Vcc=3.0V

2.4

--

--

V

ICC

Operating Power Supply

Current

CE = VIL, IDQ = 0mA, F = Fmax(3)

Vcc=3.0V

--

--

20

mA

ICCSB

Standby Current-TTL

CE = VIH, IDQ = 0mA

Vcc=3.0V

--

--

1

mA

CE ≧ Vcc-0.2V,

ICCSB1

Standby Current-CMOS VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V Vcc=3.0V

--

0.5

8

uA

1. Typical characteristics are at TA = 25oC.

2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.

3. Fmax = 1/tRC .

„ DATA RETENTION CHARACTERISTICS ( TA = 0 to + 70oC )

SYMBOL

PARAMETER

TEST CONDITIONS

VDR

Vcc for Data Retention

CE ≧ Vcc - 0.2V

VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V

MIN. TYP. (1) MAX.

1.5

--

--

UNITS

V

ICCDR

Data Retention Current

CE ≧ Vcc - 0.2V

VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V

--

0.3

6

uA

tCDR

Chip Deselect to Data

Retention Time

See Retention Waveform

tR

Operation Recovery Time

0

--

--

ns

TRC (2)

--

--

ns

1. Vcc = 1.5V, TA = + 25OC

2. tRC = Read Cycle Time

„ LOW VCC DATA RETENTION WAVEFORM

( CE Controlled )

Vcc

CE

Vcc

t CDR

VIH

Data Retention Mode

VDR ≥ 1.5V

CE ≥ Vcc - 0.2V

Vcc

tR

VIH

R0201-BS62LV4000

3

Revision 2.3

Jan. 2004

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