BS62LV1605EIP55 データシートの表示（PDF） - Brilliance Semiconductor

部品番号

コンポーネント説明

一致するリスト

BS62LV1605EIP55

Very Low Power/Voltage CMOS SRAM 2M X 8 bit

Brilliance Semiconductor 

BSI

„ DC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC )

PARAMETER

NAME

PARAMETER

TEST CONDITIONS

VIL

Guaranteed Input Low

Voltage(3)

Vcc=5V

VIH

Guaranteed Input High

Voltage(3)

Vcc=5V

IIL

Input Leakage Current Vcc = Max, VIN = 0V to Vcc

ILO

Output Leakage Current

Vcc = Max, CE1 = VIH or CE2 = VIL or

OE = VIH, VI/O = 0V to Vcc

VOL

Output Low Voltage

Vcc = Max, IOL = 2mA

Vcc=5V

BS62LV1605

MIN. TYP. (1) MAX.

UNITS

-0.5

--

0.8

V

2.2

--

Vcc+0.3

V

--

--

1

uA

--

--

1

uA

--

--

0.4

V

VOH

ICC(4)

ICCSB

Output High Voltage

Vcc = Min, IOH = -1mA

Vcc=5V

2.4

--

Operating Power Supply CE1= VIL, CE2= VIH,

Current

IDQ = 0mA, F = Fmax(2)

55ns

70ns

Vcc=5V

--

--

--

--

Standby Current-TTL

CE1 = VIH or CE2= V IIL, DQ = 0mA Vcc=5V

--

--

--

V

115

mA

92

2.5

mA

ICCSB1(5)

CE1≧Vcc-0.2V or CE2≦0.2V,

Standby Current-CMOS VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V

Vcc=5V

--

15

220

uA

1. Typical characteristics are at TA = 25oC.

2. Fmax = 1/tRC .

3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.

4. Icc_Max. is 113mA(@55ns) / 90mA(@70ns) during 0~70oC operation.

5. IccsB1 is 110uA at Vcc=5.0V and TA=70oC.

„ DATA RETENTION CHARACTERISTICS ( TA = -40 to + 85oC )

SYMBOL

PARAMETER

TEST CONDITIONS

MIN. TYP. (1) MAX.

UNITS

CE1≧ Vcc - 0.2V or CE2 ≦ 0.2V,

VDR

Vcc for Data Retention

VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V

1.5

--

--

V

ICCDR(3)

Data Retention Current

CE1 ≧ Vcc - 0.2V or CE2 ≦ 0.2V,

VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V

--

1.5

5

uA

tCDR

Chip Deselect to Data

Retention Time

See Retention Waveform

tR

Operation Recovery Time

0

--

--

ns

TRC (2)

--

--

ns

1. Vcc = 1.5V, TA = + 25OC

2. tRC = Read Cycle Time

3. IccDR(Max.) is 2.5uA at TA=70OC.

„ LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled )

Vcc

Vcc

t CDR

Data Retention Mode

VDR ≥ 1.5V

CE1

VIH

CE1 ≥ Vcc - 0.2V

„ LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled )

Vcc

tR

VIH

Vcc

Vcc

t CDR

Data Retention Mode

VDR ≧ 1.5V

Vcc

tR

CE2

CE2 ≦ 0.2V

VIL

VIL

R0201-BS62LV1605

3

Revision 2.1

Jan. 2004

Share Link: