BS616LV2020 データシートの表示（PDF） - Brilliance Semiconductor

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BS616LV2020

Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable

Brilliance Semiconductor 

BSI

BS616LV2020

„ DC ELECTRICAL CHARACTERISTICS (TA = 0oC to +70oC)

PARAMETER

NAME

VIL

VIH

PARAMETER

Guaranteed Input Low

Voltage(2)

Guaranteed Input High

Voltage(2)

IIL

Input Leakage Current

TEST CONDITIONS

MIN. TYP.(1) MAX. UNITS

Vcc=3.0V -0.5 --

0.8

V

Vcc=3.0V 2.0 -- Vcc+0.2 V

Vcc = Max, VIN = 0V to Vcc

-- --

1

uA

IOL

Output Leakage Current

Vcc = Max, CE1=VIH or CE2=VIL or OE = VIH, VI/O=

0V to Vcc

--

--

1

uA

VOL

Output Low Voltage

Vcc = Max, IOL = 2mA

Vcc=3.0V --

--

0.4

V

VOH

Output High Voltage

Vcc = Min, IOH = -1mA

Vcc=3.0V 2.4 --

--

V

ICC

Operating Power Supply Vcc = Max, CE1= VIL, CE2=VIH

Current

IDQ = 0mA, F = Fmax(3)

Vcc=3.0V --

--

30

mA

ICCSB

Standby CurrentΓTL

Vcc = Max, CE1 = VIH or CE2=VIL

IDQ = 0mA

Vcc=3.0V --

--

1

mA

Vcc = Max, CE1ЊVcc-0.2V or

ICCSB1

Standby CurrentΓMOS CE2Љ0.2V, Other inputsЊVcc - 0.2V Vcc=3.0V --

0.5

8

uA

or VINЉ0.2V

1. Typical characteristics are at TA = 25oC.

2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.

3. Fmax = 1/tRC .

R0201-BS616LV2020

4

Revision 2.3

April 2002

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