AT-36408 データシートの表示（PDF） - HP => Agilent Technologies

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AT-36408

4.8 V NPN Common Emitter Output Power Transistor for GSM Class IV Phones

HP => Agilent Technologies 

AT-36408 Absolute Maximum Ratings

Symbol

VEBO

VCBO

VCEO

IC

PT

Tj

TSTG

Parameter

Emitter-Base Voltage

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current[2]

Peak Power Dissipation [2, 3]

Junction Temperature

Storage Temperature

Units

V

V

V

A

W

°C

°C

Absolute

Maximum[1]

1.4

16.0

9.5

1.7

8.6

150

-65 to 150

Notes:

1. Permanent damage may occur if any of these limits are exceeded.

2. Pulsed operation, pulse width = 577␣ µsec, duty cycle␣ =␣ 12.5%.

3. Derate at 133.3 mW/°C for TC␣ >␣ 85 °C. TC is defined to be the temperature of

the collector pins 3 and 6, where the lead contacts the circuit board.

4. Using the liquid crystal technique, VCE = 4.5 V, Ic = 100 mA, Tj =150°C, 1- 2␣ µm

“hot-spot” resolution.

Thermal Resistance[4]:

θjc = 60°C/W

Electrical Specifications, TC = 25°C

Symbol

Parameters and Test Conditions

Units Min. Typ. Max.

Freq. = 900 MHz, VCE = 4.8 V, ICQ = 50 mA, pulsed operation, pulse width =

577 µsec, duty cycle = 12.5%, Test Circuit A,unless otherwise specified

Pout Output Power[1]

ηC

Collector Efficiency[1]

H2

2nd Harmonic[1]

H3

3rd Harmonic[1]

Mismatch Tolerance, No Damage[1]

Pin = +26 dBm dBm +34.0 +35.0

Pin = +26 dBm % 55 65

F0 = 900 MHz dBc

-50

F0 = 900 MHz dBc

-40

Pout = +35 dBm

7:1

any phase, 2 sec duration

BVEBO Emitter-Base Breakdown Voltage

IE = 0.8 mA, open collector V 1.4

BVCBO Collector-Base Breakdown Voltage

IC = 4.0 mA, open emitter V 16.0

BVCEO Collector-Emitter Breakdown Voltage

IC = 20.0 mA, open base V

9.5

hFE Forward Current Transfer Ratio

VCE = 3 V, IC = 180 mA — 80 150 330

ICEO Collector Leakage Current

VCEO = 5 V µA

50

Note:

1. With external matching on input and output, tested in a 50 ohm environment. Refer to Test Circuit A (GSM).

4-82

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