2SC5390 データシートの表示（PDF） - Hitachi -> Renesas Electronics
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2SC5390 Datasheet PDF : 6 Pages
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2SC5390
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at Tc = 25°C
Symbol
VCBO
VCEO
VEBO
IC
ic(peak)
PC
PC * 1
Tj
Tstg
Ratings
Unit
110
V
110
V
3
V
200
mA
400
mA
1.4
W
7
W
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit Test Conditions
Collector to base breakdown V(BR)CBO
110
—
—
V
voltage
IC = 10É A, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
110
—
—
V
IC = 1mA, RBE = ∞
Collector cutoff current
I CBO
—
—
Emitter cutoff current
I EBO
—
—
DC current transfer ratio
hFE
30
—
Base to emitter voltage
VBE
—
—
Collector to emitter saturation VCE(sat)
—
—
voltage
10
µA
10
µA
100
1
V
1
V
VCB = 100V, IE = 0
VE B = 3V, IC = 0
VCE = 10 V, IC = 10mA
VCE = 10 V, IC = 10mA
IC = 200mA, IB = 20mA
Gain bandwidth product
fT
Collector Output capacitance Cob
1.0
1.4
—
GHz
VCE = 10 V, IC = 50mA
—
2.4
3.5
pF
VCB = 30V, IE = 0
f = 1MHz
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