2N5657 データシートの表示（PDF） - STMicroelectronics
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2N5657 Datasheet PDF : 5 Pages
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2N5657
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-case
Max
6.25
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICBO
ICEV
Collector Cut-off
Current (IE = 0)
Collector Cut-off
Current (VBE = -1.5V)
VCE = 375 V
VCE = 350 V
VCE = 250 V Tc = 100 oC
ICEO
Collector Cut-off
Current (IB = 0)
IEBO Emitt er Cut-off Current
(IC = 0)
V( BR)CEO ∗ Collect or-Emitter
Breakdown Voltage
VCE = 250 V
VEB = 6 V
IC = 1 mA
VCEO(sus )∗ Collect or-Emitter
Sustaining Voltage
IC = 100 mA L = 50 mH
VCE(sat)∗ Collect or-Emitter
Saturation Voltage
IC = 0.1 A
IC = 0.25 A
IC = 0.5 A
IB = 10 mA
IB = 25 mA
IB = 0.1 A
VBE∗ Base-Emitt er Voltage IC = 0. 1 A VCE = 10 V
hFE∗ DC Current G ain
IC = 50 mA
IC = 0.1 A
IC = 0.25 A
IC = 0.5 A
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
hf e
Small Signal Current IC = 0. 1 A VCE = 10 V f = 1KHz
Gain
fT
Transit ion f requency IC = 50 mA VCE = 10 V f =10MHz
CCBO Collect or Base
VCB = 10 V
Capacitance
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
f = 100KHz
Min. Typ.
350
350
25
30
15
5
20
10
M a x.
0.01
0.1
1
0.1
0.01
1
2.5
10
1
250
25
Unit
mA
mA
mA
mA
mA
V
V
V
V
V
V
MHz
pF
Safe Operating Area
Derating Curve
2/5
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