CM150E3U-24H(1998) データシートの表示（PDF） - MITSUBISHI ELECTRIC

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CM150E3U-24H
(Rev.:1998)

HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI ELECTRIC  

MITSUBISHI IGBT MODULES

CM150E3U-24H

HIGH POWER SWITCHING USE

INSULATED TYPE

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings

Junction Temperature

Storage Temperature

Collector-Emitter Voltage (G-E SHORT)

Gate-Emitter Voltage (C-E SHORT)

Collector Current (Tc = 25°C)

Peak Collector Current (Tj ≤ 150°C)

Emitter Current** (Tc = 25°C)

Peak Emitter Current**

Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C)

Mounting Torque, M6 Main Terminal

Symbol

Tj

Tstg

VCES

VGES

IC

ICM

IE

IEM

Pc

–

CM150E3U-24H

-40 to 150

-40 to 125

1200

±20

150

300*

150

300*

890

3.5 ~ 4.5

Mounting Torque, M6 Mounting

–

3.5 ~ 4.5

Weight

–

400

Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)

Viso

2500

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Collector-Cutoff Current

ICES

VCE = VCES, VGE = 0V

–

Gate Leakage Voltage

IGES

VGE = VGES, VCE = 0V

–

Gate-Emitter Threshold Voltage

Collector-Emitter Saturation Voltage

VGE(th)

IC = 15mA, VCE = 10V

4.5

VCE(sat)

IC = 150A, VGE = 15V, Tj = 25°C

–

IC = 150A, VGE = 15V, Tj = 125°C

–

Total Gate Charge

Emitter-Collector Voltage**

QG

VEC

VCC = 600V, IC = 150A, VGE = 15V

–

IE = 150A, VGE = 0V

–

Emitter-Collector Voltage

VFM

IF = 150A, Clamp Diode Part

–

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.

Typ.

–

–

6

2.9

2.85

560

–

–

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Input Capacitance

Output Capacitance

Cies

Coes

–

VCE = 10V, VGE = 0V

–

Reverse Transfer Capacitance

Resistive

Turn-on Delay Time

Load

Rise Time

Switch

Turn-off Delay Time

Times

Fall Time

Diode Reverse Recovery Time**

Diode Reverse Recovery Charge**

Diode Reverse Recovery Time

Diode Reverse Recovery Charge

Cres

td(on)

tr

td(off)

tf

trr

Qrr

trr

Qrr

–

VCC = 600V, IC = 150A,

–

VGE1 = VGE2 = 15V,

–

RG = 2.1Ω, Resistive

–

Load Switching Operation

–

IE = 150A, diE/dt = -300A/µs

–

IE = 150A, diE/dt = -300A/µs

–

IF = 150A, Clamp Diode Part

–

diF/dt = -300A/µs

–

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Typ.

–

–

–

–

–

–

–

–

0.82

–

0.82

Units

°C

°C

Volts

Volts

Amperes

Amperes

Amperes

Amperes

Watts

N·m

N·m

Grams

Vrms

Max.

1

0.5

7.5

3.7

–

–

3.2

3.2

Units

mA

µA

Volts

Volts

Volts

nC

Volts

Volts

Max.

22

7.4

4.4

200

250

300

350

300

–

300

–

Units

nF

nF

nF

ns

ns

ns

ns

ns

µC

ns

µC

Sep.1998

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