SD683 データシートの表示（PDF） - Inchange Semiconductor

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SD683

Silicon NPN Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor

isc Product Specification

2SD683

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 400V(Min)

·High DC Current Gain-

: hFE= 500(Min.)@ IC= 5A

APPLICATIONS

·High voltage and high power switching applications.

·Motor driver applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

600

V

VCEO Collector-Emitter Voltage

400

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

15

A

IBB

Base Current

PC

Collector Power Dissipation

@TC=25℃

Tj

Junction Temperature

Tstg

Storage Temperature Range

2

A

150

W

150

℃

-65~150 ℃

isc Website：www.iscsemi.cn

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