BU100 データシートの表示（PDF） - Inchange Semiconductor

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BU100

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0

V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA; IC=0

VCE(sat) Collector-emitter saturation voltage IC=8A ;IB=2.5A

VBE(sat) Base-emitter saturation voltage

IC=8A ;IB=2.5A

ICBO

Collector cut-off current

VCB=120V; IE=0

IEBO

Emitter cut-off current

VEB=7V; IC=0

hFE

DC current gain

IC=2A ; VCE=2V

fT

Transition frequency

IC=0.5A ; VCE=10V;f=1MHz

Product Specification

BU100

MIN TYP. MAX UNIT

60

V

150

V

7

V

3.3

V

2.2

V

10 μA

10 μA

40

90

0.1

MHz

2

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