BSS84LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 1)
Gate−Source Threaded Voltage
(VDS = VGS, ID = 250 mA)
Static Drain−to−Source On−Resistance
(VGS = 5.0 Vdc, ID = 100 mAdc)
Transfer Admittance
(VDS = 25 Vdc, ID = 100 mAdc, f = 1.0 kHz)
V(BR)DSS
50
IDSS
−
−
−
IGSS
−
VGS(th)
0.9
RDS(on)
−
|yfs|
50
DYNAMIC CHARACTERISTICS
Input Capacitance
VDS = 5.0 Vdc
Ciss
−
Output Capacitance
VDS = 5.0 Vdc
Coss
−
Transfer Capacitance
VDG = 5.0 Vdc
Crss
−
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
td(on)
−
Rise Time
Turn−Off Delay Time
VDD = −15 Vdc, ID = −2.5 Adc,
RL = 50 W
tr
−
td(off)
−
Fall Time
tf
−
Gate Charge
QT
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Current
IS
−
Pulsed Current
ISM
−
Forward Voltage (Note 2)
VGS = 0 V, IS = 130 mA
VSD
−
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
Typ
Max
Unit
−
−
Vdc
mAdc
−
0.1
−
15
−
60
−
±10
nAdc
−
2.0
Vdc
5.0
10
W
−
−
mS
30
−
pF
10
−
5.0
−
2.5
−
ns
1.0
−
16
−
8.0
−
6000
−
pC
−
0.130
A
−
0.520
−
2.2
V
TYPICAL ELECTRICAL CHARACTERISTICS
0.6
VDS = 10 V
0.5
0.4
0.3
25°C
− 55°C
150°C
0.2
0.1
0
1
1.5
2
2.5
3
3.5
4
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. Transfer Characteristics
0.5
0.45 TJ = 25°C
0.4
VGS = 3.5 V
3.25 V
0.35
0.3
3.0 V
0.25
0.2
2.75 V
0.15
2.5 V
0.1
0.05
2.25 V
0
0 1 2 3 4 5 6 7 8 9 10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. On−Region Characteristics
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