NE5520279A-T1A データシートの表示（PDF） - California Eastern Laboratories.

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NE5520279A-T1A

3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS

California Eastern Laboratories. 

S-PARAMETERS

NE5520279A

LARGE SIGNAL IMPEDANCE (VDS = 3.2 V, ID = 700 mA, f = 1.8 GHz)

f (GHz)

1.8

Zin ()

1.77 j6.71

ZOL () Note

1.25 j5.73

Note ZOL is the conjugate of optimum load impedance at given voltage, idling current, input power and frequency.

4

Data Sheet PU10123EJ03V0DS

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